DIODE GEN PURP 600V 10A TO263AB
反向耐压600 V
平均整流电流10 A
正向压降1.2 V
类型标准
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反向耐压600 V
平均整流电流10 A
正向压降1.2 V最大 · 10 A
类型标准Fast Recovery =< 500ns，> 200mA (Io)
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 10 A |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D2PAK) |
| 其他 | |
| Base Product Number | 10ETF06 |
| Capacitance @ Vr, F | - |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 145 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |