Rectron USA中国台湾

DIODE GEN PURP 1KV 500MA R-1

反向耐压1 kV
平均整流电流500 mA
正向压降1.8 V
类型标准

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技术参数

反向耐压1 kV
平均整流电流500 mA
正向压降1.8 V最大 · 500 mA
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)500mA
Current - Reverse Leakage @ Vr5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 500 mA
环境与封装
Mounting TypeThrough Hole
Operating Temperature - Junction-55°C~150°C
PackageTape & Reel (TR)
Package / CaseR-1, Axial
Supplier Device PackageR-1
其他
Capacitance @ Vr, F15pF @ 4V, 1MHz
Diode TypeStandard
MfrRectron USA
Product StatusActive
Reverse Recovery Time (trr)300 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

技术资料