1N5815

DIODE GEN PURP 125V 20A DO4

反向耐压125 V
平均整流电流20 A
正向压降900 mV
类型标准

全部替代型号

查看完整报告

技术参数

反向耐压125 V
平均整流电流20 A
正向压降900 mV最大 · 10 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)20A
Current - Reverse Leakage @ Vr10 µA @ 125 V
Voltage - DC Reverse (Vr) (Max)125 V
Voltage - Forward (Vf) (Max) @ If900 mV @ 10 A
环境与封装
Mounting TypeStud Mount
Operating Temperature - Junction-65°C~175°C
PackageBox
Package / CaseDO-203AA, DO-4, Stud
Supplier Device PackageDO-4
其他
Capacitance @ Vr, F-
Diode TypeStandard
MfrSolid State Inc.
Product StatusActive
Reverse Recovery Time (trr)35 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

器件图片

技术资料