APT24F50S

在产晶体管 - FET,MOSFET - 单TO-268-3

MOSFET N-CH 500V 24A D3PAK

沟道N 沟道
耐压500 V
连续漏极电流24 A
导通电阻240 mΩ

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流24 A
导通电阻240 mΩ最大 · 11A
阈值电压5 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)335W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageD3Pak
其他
Base Product NumberAPT24F50
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3630 pF @ 25 V
MfrMicrosemi Corporation
Product StatusActive
Rds On (Max) @ Id, Vgs240mOhm @ 11A, 10V
SeriesPOWER MOS 8™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

技术资料