BA159

BA159

在产单二极管

DIODE GEN PURP 1KV 1A DO41

反向耐压1 kV
平均整流电流1 A
正向压降1.3 V
类型标准

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技术参数

反向耐压1 kV
平均整流电流1 A
正向压降1.3 V最大 · 1 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 1 A
环境与封装
Mounting TypeThrough Hole
Operating Temperature - Junction-50°C ~ 150°C
PackageCut Tape (CT)
Package / CaseDO-204AC, DO-41, Axial
Supplier Device PackageDO-41/DO-204AC
其他
Capacitance @ Vr, F-
MfrDiotec Semiconductor
Product StatusActive
Reverse Recovery Time (trr)300 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

器件图片

技术资料