MOSFET P-CH 60V 170MA SOT23-3
沟道P 沟道
耐压60 V
连续漏极电流170 mA
导通电阻8 Ω
全部替代型号
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沟道P 沟道
耐压60 V
连续漏极电流170 mA
导通电阻8 Ω最大 · 170mA
阈值电压2 V最大 · 20μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 360mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23 |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 170mA, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |