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技术参数

电源
Current - Collector (Ic) (Max)500mA
Power - Max1W
Voltage - Collector Emitter Breakdown (Max)30V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 100mA, 2V
Frequency - Transition1.3GHz
Gain-
Noise Figure (dB Typ @ f)-
环境与封装
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
其他
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP

器件图片

技术资料