FGA40T65SHDF

FGA40T65SHDF

在产晶体管 - IGBT - 单

INSULATED GATE BIPOLAR TRANSISTO

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技术参数

电源
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)120 A
Power - Max268 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageBulk
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
其他
Gate Charge68 nC
IGBT TypeTrench Field Stop
Input TypeStandard
MfrFairchild Semiconductor
Product StatusActive
Reverse Recovery Time (trr)101 ns
Series-
Switching Energy1.22mJ (on), 440µJ (off)
Td (on/off) @ 25°C18ns/64ns
Test Condition400V, 40A, 6Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.81V @ 15V, 40A

器件图片

技术资料

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