类型PNP
集射极耐压140 V
集电极电流10 µA
放大倍数 hFE50
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类型PNP
集射极耐压140 V
集电极电流10 µA最大
放大倍数 hFE5050mA
功率1 W最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 10µA |
| Current - Collector (Ic) (Max) | 10 µA |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | - |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | 4-SMD, No Lead |
| Supplier Device Package | UB |
| 其他 | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | Military, MIL-PRF-19500/357 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
技术资料
该型号暂未收录资料。