沟道N 沟道
耐压65 V
连续漏极电流1 A
导通电阻750 mΩ
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沟道N 沟道
耐压65 V
连续漏极电流1 A
导通电阻750 mΩ最大 · 1A
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Drain to Source Voltage (Vdss) | 65 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Power Dissipation (Max) | 40W |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| 其他 | |
| Base Product Number | MLD1N |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 1A, 5V |
| Series | SMARTDISCRETES™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | - |
| Vgs(th) (Max) @ Id | - |
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