RF MOSFET TRANSISTOR 500W 50V NI-780H-2L

全部替代型号

查看完整报告

技术参数

电源
Drain-Source Breakdown Voltage110 Vdc (Min)
Drain-Source Voltage-0.5, +110 Vdc
Gate-Source Voltage-6.0, +10 Vdc
环境与封装
Operating Junction Temperature225 °C
PackageNI-780H-2L
Storage Temperature Range-65 to +150 °C
其他
Freq.960–1215 MHz
Pout500 Peak W

技术资料