onsemi美国

MOSFET 2N-CH 60V 294MA SOT563

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C294mA
Drain to Source Voltage (Vdss)60V
Power - Max250mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
其他
Base Product NumberNTZD5110
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
Series-
Vgs(th) (Max) @ Id2.5V @ 250µA

技术资料