PMV65XPER

在产晶体管 - FET,MOSFET - 单TO-236AB

MOSFET P-CH 20V 2.8A TO236AB

沟道P 沟道
耐压20 V
连续漏极电流2.8 A
导通电阻78 mΩ

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技术参数

沟道P 沟道
耐压20 V
连续漏极电流2.8 A
导通电阻78 mΩ最大 · 2.8A
阈值电压1.25 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)480mW (Ta), 6.25W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
其他
Base Product NumberPMV65
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds618 pF @ 10 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs78mOhm @ 2.8A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.25V @ 250µA

技术资料