RS1M

DIODE GEN PURP 1A DO214AC

平均整流电流1 A
正向压降1.3 V
类型标准

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技术参数

平均整流电流1 A
正向压降1.3 V最大 · 1 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 1 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C~150°C
PackageTape & Reel (TR)
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
其他
Base Product NumberRS1M
Capacitance @ Vr, F10pF @ 4V, 1MHz
Diode TypeStandard
MfrTaiwan Semiconductor Corporation
Product StatusActive
Reverse Recovery Time (trr)500 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

器件图片

技术资料