DIODE GEN PURP 1V 2A DO214AA

反向耐压1 kV
平均整流电流2 A
正向压降1.15 V
类型标准

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技术参数

反向耐压1 kV
平均整流电流2 A
正向压降1.15 V最大 · 2 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr1 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.15 V @ 2 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-50°C~150°C
PackageBulk
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
其他
Base Product NumberS2M
Capacitance @ Vr, F30pF @ 4V, 1MHz
Diode TypeStandard
MfrFairchild Semiconductor
Product StatusActive
Reverse Recovery Time (trr)1.5 µs
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)

技术资料