DIODE SIL CARB 650V 10A TO220FM
反向耐压650 V
平均整流电流10 A
正向压降1.55 V
类型肖特基
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反向耐压650 V
平均整流电流10 A
正向压降1.55 V最大 · 10 A
类型肖特基
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175°C(Max) |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220FM |
| 其他 | |
| Base Product Number | SCS210 |
| Capacitance @ Vr, F | 365pF @ 1V, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |