SIR472DP-T1-GE3

SIR472DP-T1-GE3

单 FET,MOSFET

MOSFET N-CH 30V 20A PPAK SO-8

沟道N 沟道
耐压30 V
连续漏极电流20 A
导通电阻12 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流20 A
导通电阻12 mΩ最大 · 13.8A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.9W (Ta), 29.8W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8
其他
Base Product NumberSIR472
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 15 V
MfrVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusObsolete
Rds On (Max) @ Id, Vgs12mOhm @ 13.8A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料