SIS932EDN-T1-GE3

FET,MOSFET 阵列

MOSFET 2N-CH 30V 6A PPAK 1212

全部替代型号

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drain to Source Voltage (Vdss)30V
Power - Max2.6W (Ta), 23W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual
其他
Base Product NumberSIS932
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
ManufacturerVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Rds On (Max) @ Id, Vgs22mOhm @ 10A, 4.5V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA

技术资料