SS1003EJ-TR
onsemi美国

RECTIFIER DIODE

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技术参数

电源
Current - Average Rectified (Io) (per Diode)1A
Current - Reverse Leakage @ Vr360 µA @ 15 V
Voltage - DC Reverse (Vr) (Max)30 V
Voltage - Forward (Vf) (Max) @ If450 mV @ 1 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C~125°C
PackageBulk
Package / Case4-UFDFN
Supplier Device Package4-ECSP1608
其他
Diode Configuration2 Independent
Diode TypeSchottky
Mfronsemi
Product StatusObsolete
Reverse Recovery Time (trr)10 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

器件图片

技术资料

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