SSM6N7002CFU,LF

在产FET,MOSFET 阵列

MOSFET 2N-CH 60V 0.17A US6

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C170mA
Drain to Source Voltage (Vdss)60V
Power - Max285mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
其他
Base Product NumberSSM6N7002
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds17pF @ 10V
MfrToshiba Semiconductor and Storage
Product StatusActive
Rds On (Max) @ Id, Vgs3.9Ohm @ 100mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

技术资料

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