STS1HNK60

STS1HNK60

停产晶体管 - FET,MOSFET - 单8-SOIC

MOSFET N-CH 600V 300MA 8SO

沟道N 沟道
耐压600 V
连续漏极电流300 mA
导通电阻8.5 Ω

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压600 V
连续漏极电流300 mA
导通电阻8.5 Ω最大 · 500mA
阈值电压3.7 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)2W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-65°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberSTS1
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds156 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs8.5Ohm @ 500mA, 10V
SeriesSuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.7V @ 250µA

器件图片

技术资料