STS6NF20V

STS6NF20V

在产单 FET,MOSFET8-SOIC

MOSFET N-CH 20V 6A 8SO

沟道N 沟道
耐压20 V
连续漏极电流6 A
导通电阻40 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压20 V
连续漏极电流6 A
导通电阻40 mΩ最大 · 3A
阈值电压600 mV最大 · 250μA (Min)
电源
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.95V, 4.5V
Power Dissipation (Max)2.5W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberSTS6NF20
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 15 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs40mOhm @ 3A, 4.5V
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)

器件图片

技术资料