GANFET N-CH 600V 17A 3PQFN

沟道N 沟道
耐压600 V
连续漏极电流17 A
导通电阻180 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流17 A
导通电阻180 mΩ最大 · 11A
阈值电压2.6 V最大 · 500μA
电源
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)8V
Power Dissipation (Max)96W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTray
Package / Case3-PowerDFN
Supplier Device Package3-PQFN (8x8)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 480 V
MfrTransphorm
Product StatusObsolete
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 8V
Series-
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)±18V
Vgs(th) (Max) @ Id2.6V @ 500µA

技术资料