TSM061NA03CR RLG

TSM061NA03CR RLG

停产单 FET,MOSFET

MOSFET N-CH 30V 88A 8PDFN

沟道N 沟道
耐压30 V
连续漏极电流88 A
导通电阻6.1 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流88 A
导通电阻6.1 mΩ最大 · 16A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C88A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)78W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)
其他
Base Product NumberTSM061
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1133 pF @ 15 V
MfrTaiwan Semiconductor Corporation
Product StatusObsolete
Rds On (Max) @ Id, Vgs6.1mOhm @ 16A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料