NPN SILICON AMPLIFIER AND OSCILL
全部替代型号
查看完整报告技术参数
| 电源 | |
|---|---|
| Current - Collector (Ic) (Max) | 30mA |
| Power - Max | 200mW |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
| Frequency - Transition | 12GHz |
| Gain | 8.5dB |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | 6-SuperMiniMold |
| 其他 | |
| Mfr | Renesas |
| Product Status | Last Time Buy |
| Series | - |
| Transistor Type | 2 NPN (Dual) |
技术资料
该型号暂未收录资料。