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技术参数

电源
Current - Continuous Drain (Id) @ 25°C4.1A, 3.4A
Drain to Source Voltage (Vdss)30V
Power - Max1.25W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) @ Vgs12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
MfrDiodes Incorporated
Product StatusObsolete
Rds On (Max) @ Id, Vgs50mOhm @ 7.8A, 10V
Series-
Vgs(th) (Max) @ Id1V @ 250µA (Min)

器件图片

技术资料