NTE Electronics, IncUnited States
DIODE GEN PURP 75V 150MA DO35
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View full reportTechnical parameters
Key specs
Reverse voltage75 V
Average rectified current150 mA
Forward voltage1 VMax · 10 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 150mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 10 mA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Box |
| Package / Case | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 |
| Other | |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Diode Type | Standard |
| Mfr | NTE Electronics, Inc |
| Product Status | Active |
| Reverse Recovery Time (trr) | 4 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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