Central Semiconductor CorpUnited States
PROGRAMMABLE UJT 40V TO226-3
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Peak | 150 nA |
| Current - Valley (Iv) | 25 µA |
| Power Dissipation (Max) | 300 mW |
| Voltage | 40V |
| Voltage - Output | 6V |
| AC and DC characteristics | |
| Voltage - Offset (Vt) | 600 mV |
| Environment and package | |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Other | |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Series | - |