Microchip TechnologyUnited States
The APT46GA90JD40 is a discrete 900V punch-through (PT) IGBT designed to provide dependable performance and thermal durability. At a case temperature of 25 °C, it delivers up to 87A of continuous collector current with pulses up to 136A and supports 284W of power dissipation. The collector-emitter saturation voltage is kept low, which helps reduce conduction losses and improve efficiency.
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Collector-Emitter Voltage [VCES] (V) | 900 |
| Continuous Collector Current [IC] (A) [@ 110° max] | 46 |
| Continuous Collector Current [IC] (A) [@ 25° max] | 87 |
| Gate Threshold Voltage [VGE(TH)] (V) [Typ.] | 4.5 |
| Power Dissipation (W) [max] | 284 |
| Pulsed Collector Current [ICM] (A) | 136 |
| Environment and package | |
| Package | SOT-227 |
| Other | |
| Configuration | Co-Packaged |
| Diode | Ultra-Fast DQ |
| Part Type | Discrete IGBT |
| Technology | PT |
Documents
DatasheetDatasheet · 247.4 KB · 2026-09-23MarketingMarketing · 22.4 MB · 2026-09-23Application NoteApplication Note · 1.0 MB · 2026-09-23MarketingMarketing · 876.0 KB · 2026-09-23Application NoteApplication Note · 374.0 KB · 2026-09-23Application NoteApplication Note · 247.5 KB · 2026-09-23Application NoteApplication Note · 241.7 KB · 2026-09-23Application NoteApplication Note · 237.9 KB · 2026-09-23Application NoteApplication Note · 221.1 KB · 2026-09-23Application NoteApplication Note · 89.2 KB · 2026-09-23
Open document center