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Technical parameters

Power
Current Drain (Id) - Max50 mA
Current - Drain (Idss) @ Vds (Vgs=0)25 mA @ 20 V
Drain to Source Voltage (Vdss)40 V
Power - Max350 mW
Voltage - Breakdown (V(BR)GSS)40 V
Voltage - Cutoff (VGS off) @ Id2 V @ 1 nA
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C~150°C(TJ)
PackageTray
Package / CaseDie
Supplier Device PackageDie
Other
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds20pF @ 20V
MfrCentral Semiconductor Corp
Product StatusObsolete
Resistance - RDS(On)60 Ohms
Series-

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