Rohm SemiconductorJapan
TRANS PREBIAS NPN 150MW EMT3
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 200 mA |
| Power - Max | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 260 MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | SC-75, SOT-416 |
| Supplier Device Package | EMT3 |
| Other | |
| Base Product Number | DTD743 |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |