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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C3.6A
Drain to Source Voltage (Vdss)80V
Power - Max2W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Other
Base Product NumberIRF7380PBF
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
MfrInfineon Technologies
Product StatusDiscontinued at Digi-Key
Rds On (Max) @ Id, Vgs73mOhm @ 2.2A, 10V
SeriesHEXFET®
Vgs(th) (Max) @ Id4V @ 250µA

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