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Technical parameters

Power
Input bias current (max) (pA)200
Input common mode headroom (to negative supply) (typ) (V)3
Input common mode headroom (to positive supply) (typ) (V)0
Iq per channel (typ) (mA)1.8
Number of channels4
Output swing headroom (to negative supply) (typ) (V)1.5
Output swing headroom (to positive supply) (typ) (V)-1.5
AC and DC characteristics
CMRR (typ) (dB)100
Offset drift (typ) (µV/°C)10
Slew rate (typ) (V/µs)13
Vos (offset voltage at 25°C) (max) (mV)5
Environment and package
Operating temperature range (°C)-55 to 125
Other
ArchitectureFET
GBW (typ) (MHz)4
Iout (typ) (A)0.03
Rail-to-railNo
RatingMilitary
Vn at 1 kHz (typ) (nV√Hz)20

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