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Technical parameters

Power
Ic-最大集电极电流0.15A
IC-最大集电极电流0.15A
VCBO-CB结击穿电压60V
VCBO-集基级击穿电压60V
VCEO-CE结击穿电压50V
VCEO-集射级击穿电压50V
VEBO-EB结击穿电压6V
VEBO-射基级击穿电压6V
AC and DC characteristics
fT-变换频率140MHZ
hFE-最小直流增益120
Hfe-最小直流增益120
Environment and package
封装类型1SOT363
Other
Pd-功率耗散0.3W
Pd-最大功率耗散0.3W
VCE(sat)-CE结饱和压降0.5V
VCE(sat)-集射级饱和压降0.5V
引脚数量16

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