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Technical parameters

Power
IC-集电极直流电流(25℃)600A
VCE(sat)-集射极导通饱和电压1.45V
VCES-集射极阻断电压600V
最大允许功耗1500W
Other
IGBT集成二极管1
关断损耗能量25mJ
单位温升0.1℃/W
开通损耗能量NmJ
栅极充电电荷NnC
隔离型IGBT0
集成整流桥堆0

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