All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| IC(25℃)-最大集电极电流 | 75A |
| IC-集电极直流电流(25℃) | 75A |
| VCE(sat)-集射极导通饱和电压 | 2.2V |
| VCES-集射极阻断电压 | 1200V |
| 最大允许功耗 | 410W |
| Other | |
| Eoff-关断损耗能量 | 3.8mJ |
| Eon-开通损耗能量 | NmJ |
| IGBT集成二极管 | 0 |
| Pd-功率耗散 | 410W |
| Qg-栅极电荷 | NnC |
| VCE(sat)-集射级饱和压降 | 2.2V |
| 关断损耗能量 | 3.8mJ |
| 内置整流二极管 | 0 |
| 内置整流桥堆 | 0 |
| 单位温升 | 0.3℃/W |
| 开通损耗能量 | NmJ |
| 栅极充电电荷 | NnC |
| 隔离型IGBT | 0 |
| 集成整流桥堆 | 0 |
Documents
No documents are linked to this part yet.