Infineon TechnologiesGermany
IGBT 3 CHIP 600V WAFER
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C |
| Package | Bulk |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| Base Product Number | SIGC42T60 |
| IGBT Type | NPT |
| Input Type | Standard |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Series | - |
| Switching Energy | - |
| Td (on/off) @ 25°C | 43ns/130ns |
| Test Condition | 300V, 50A, 3.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |