Rohm SemiconductorJapan
MOSFET N/P-CH 30V 6A/4.5A 8SOIC
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Other | |
| Base Product Number | SP8M8 |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Mfr | Rohm Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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