VBsemi(微碧半导体)China
SUM110P06-07L-E3-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO263；P—Channel沟道；-60V；-120A；RDS(ON)=5(mΩ)@VGS=10V；VGS=±20V；Vth=-3V；采用Trench技术；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current120 A
On-resistance5 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 120A |
| Other | |
| 导通电阻(RDS(on)) | 5mΩ@10V |
| 耗散功率(Pd) | 3.75W |