DIODE GEN PURP 100V 200MA DO-35

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技术参数

电源
Average Rectified Forward Current200 mA
DC Forward Current300 mA
Maximum Repetitive Reverse Voltage100 V
Power Dissipation500 mW (Max)
环境与封装
Operating Junction Temperature Range-55 to +175 °C
PackageDO-204AH (DO-35)
Storage Temperature Range-65 to +200 °C
其他
Packing MethodAmmo

技术资料