全部替代型号

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技术参数

电源
Current - Collector (Ic) (Max)500mA
Power - Max12W
Voltage - Collector Emitter Breakdown (Max)50V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 100mA, 5V
Frequency - Transition2GHz
Gain8.5dB
Noise Figure (dB Typ @ f)-
环境与封装
Mounting TypeChassis Mount
Operating Temperature200°C(TJ)
PackageBulk
Package / Case55BT-1
Supplier Device Package55BT-1
其他
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

技术资料