2N5116UB/TR

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JFET P-CH 30V UB

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技术参数

电源
Current - Drain (Idss) @ Vds (Vgs=0)25 mA @ 15 V
Drain to Source Voltage (Vdss)30 V
Power - Max500 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id4 V @ 1 nA
环境与封装
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageTape & Reel (TR)
Package / Case3-SMD, No Lead
QualificationMIL-PRF-19500
Supplier Device PackageUB
其他
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds27pF @ 15V
MfrMicrochip Technology
Product StatusActive
Resistance - RDS(On)175 Ohms
Series-

技术资料

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