类型NPN
集射极耐压80 V
集电极电流7 A
放大倍数 hFE35
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类型NPN
集射极耐压80 V
集电极电流7 A最大
放大倍数 hFE35500mA
功率90 W最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 500µA |
| Current - Collector (Ic) (Max) | 7 A |
| Power - Max | 90 W |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 500mA, 4V |
| Frequency - Transition | - |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) |
| 其他 | |
| Base Product Number | 2N6316 |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |