P-CHANNEL, SINGLE ENHANCEMENT MO
沟道P 沟道
耐压40 V
连续漏极电流50 mA
导通电阻250 Ω
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沟道P 沟道
耐压40 V
连续漏极电流50 mA
导通电阻250 Ω最大 · 100μA
阈值电压5 V最大 · 10μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50mA |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 375mW |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72-4 |
| 其他 | |
| Base Product Number | 3N163 |
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5 pF @ 15 V |
| Mfr | Linear Integrated Systems, Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 250Ohm @ 100µA, 20V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6.5V |
| Vgs(th) (Max) @ Id | 5V @ 10µA |
技术资料
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