IC DRAM 256MBIT PAR 66TSOP II
类型DRAM
容量256 Mbit
接口并口
供电电压2.3 ~ 2.7 V
全部替代型号
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技术参数
类型DRAM
容量256 Mbit
接口并口
供电电压2.3 ~ 2.7 V
时钟频率200 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 2.3V ~ 2.7V |
| 交流 / 直流特性 | |
| Clock Frequency | 200 MHz |
| 环境与封装 | |
| Memory Size | 256Mbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~85°C(TA) |
| Package | Tray |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP II |
| 其他 | |
| Access Time | 700 ps |
| Base Product Number | AS4C16 |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 16M x 16 |
| Memory Type | Volatile |
| Mfr | Alliance Memory, Inc. |
| Product Status | Obsolete |
| Series | - |
| Technology | SDRAM - DDR |
| Write Cycle Time - Word, Page | 15ns |