BL(上海贝岭)中国

BL11N40

在产单 FET，MOSFETTO220 TO220F TO251 TO252

BL11N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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技术参数

环境与封装
PackageTO220 TO220F TO251 TO252
其他
ID(Max.)11A
ModeN-Channel
Qg(Typ)23nC
RDS(on)(Max.)450mΩ
TypePlanar MOSFETs
VDS(Max.)400V

技术资料

该型号暂未收录资料。