BSR202NL6327HTSA1

在产晶体管 - FET,MOSFET - 单TO-236-3

MOSFET N-CH 20V 3.8A SC59

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沟道N 沟道
耐压20 V
连续漏极电流3.8 A
导通电阻21 mΩ

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技术参数

沟道N 沟道
耐压20 V
连续漏极电流3.8 A
导通电阻21 mΩ最大 · 3.8A
阈值电压1.2 V最大 · 30μA
电源
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)500mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SC59-3
其他
Base Product NumberBSR202
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1147 pF @ 10 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs21mOhm @ 3.8A, 4.5V
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 30µA

技术资料