MOSFET P-CH 20V 860MA SOT563
沟道P 沟道
耐压20 V
连续漏极电流860 mA
导通电阻150 mΩ
全部替代型号
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沟道P 沟道
耐压20 V
连续漏极电流860 mA
导通电阻150 mΩ最大 · 950mA
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 350mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| 其他 | |
| Base Product Number | CMLDM8120 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.56 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 16 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |