DSEI2X30-10B
IXYS美国

DSEI2X30-10B

在产二极管阵列

DIODE MODULE GP 1KV 30A SOT227B

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技术参数

电源
Current - Average Rectified (Io) (per Diode)30A
Current - Reverse Leakage @ Vr750 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If2.4 V @ 30 A
环境与封装
Mounting TypeChassis Mount
Operating Temperature - Junction-40°C ~ 150°C
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberDSEI2X30
Diode Configuration2 Independent
MfrIXYS
Product StatusActive
Reverse Recovery Time (trr)50 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

器件图片

技术资料