FS03MR12A6MA1LB

FS03MR12A6MA1LB

在产FET,MOSFET 阵列

SIC 6N-CH 1200V AG-HYBRIDD

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C400A
Drain to Source Voltage (Vdss)1200V (1.2kV)
Power - Max-
环境与封装
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
PackageTray
Package / CaseModule
Supplier Device PackageAG-HYBRIDD-2
其他
Base Product NumberFS03MR12
Configuration6 N-Channel (3-Phase Bridge)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds42600pF @ 600V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs3.7mOhm @ 400A, 15V
SeriesHybridPACK™
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.55V @ 240mA

器件图片

技术资料